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The flexibility of ion implantation in the selection of dopant species, spatial location within the device, and subtle concentration profile control enables rapid introduction of new integrated process technologies, and precise optimization or elimination of performance tradeoffs in circuit technologies. Consequently, ion implant is used for almost all doping requirements in silicon devices. The ranges of doses and energies of ion implantation in common use each span several orders of magnitude.

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Common Applications of Ion Implantation in CMOS Process Technology

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  • 发表日期：

    2026年

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  • Leonard Rubin

摘要

The flexibility of ion implantation in the selection of dopant species, spatial location within the device, and subtle concentration profile control enables rapid introduction of new integrated process technologies, and precise optimization or elimination of performance tradeoffs in circuit technologies. Consequently, ion implant is used for almost all doping requirements in silicon devices. The ranges of doses and energies of ion implantation in common use each span several orders of magnitude.