In the field of power devices, there are unique challenges that require specific attention and development. While some requirements overlap with those in the CMOS world, power devices demand optimized performance of device switching behavior and the reduction of dissipation losses caused by increasing current densities at decreasing structure sizes. To achieve these features, ion implantation processing of the wafer front- and backside, as well as engineering of bulk properties, are necessary. In particular, the emerging use of wide-bandgap (WBG) materials like SiC requires special focus on the requirements towards ion implantation equipment and process. This includes a comprehensive understanding of implantation effects on these materials and their potential for enhancing device performance.