GaN, short for Gallium Nitride, is one of the third-generation semiconductors. It has brilliant material properties such as large forbidden band width, strong breakdown field strength, high electron mobility, and high current density. These outstanding properties demonstrate that GaN devices will replace the traditional semiconductor materials like Si in many fields such as wireless communication. This paper first introduced the advantages and wide applications of GaN, and then discussed the radio frequency power amplifiers based on GaN material, which is the kay component in wireless applications. Then, the evolution of cellular communications was reviewed in detail, demonstrating the importance of RF power amplifiers. At last, this paper evaluated current applications of GaN RF PAs in wireless communications field and analyzed the challenges and future works of wireless communications based on GaN materials.