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The present work prepared Tm-doped Cd:ZnS (TM = Ni2+, Cr3+, Fe2+ and Bi3+) by co-precipitation route at room temperature. From XRD data, the average crystalline was estimated ~ 2–3 nm. The SEM images displayed that all doped ZnS QDs surfaces appeared to be agglomerated in shape. The optical properties of Tm-doped Cd:ZnS QDs have been studied through UV-vis spectra. The optical band gap received a blue shift for Cr3+, Fe2+ and Bi3+ ions doped Cd0.89Zn0.1TM0.01S QDs. The higher transmittance was offered by Ni at. 1% doped Cd:ZnS QDs in the visible region. The PL emission peaks exhibited a high intense green emission. The cyclic voltammetry analysis evidenced that all doped ZnS QDs possessed better electrical properties. Since prepared QDs show better optical properties and these QDs are suitable for optoelectronic device applications.

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Influence of Transition Metal (Tm) on the Structural, Optical and Electrochemical Properties of Zn:CdS Quantum Dots (Tm = Ni2+, Cr3+, Fe2+ and Bi3+)

  • 会议论文

  • 发表日期：

    2026年

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  • A. Krishnamoorthy,
  • I. Devadoss,
  • P. Sakthivel,
  • V. M. Suntharavel Muthaiah

摘要

The present work prepared Tm-doped Cd:ZnS (TM = Ni2+, Cr3+, Fe2+ and Bi3+) by co-precipitation route at room temperature. From XRD data, the average crystalline was estimated ~ 2–3 nm. The SEM images displayed that all doped ZnS QDs surfaces appeared to be agglomerated in shape. The optical properties of Tm-doped Cd:ZnS QDs have been studied through UV-vis spectra. The optical band gap received a blue shift for Cr3+, Fe2+ and Bi3+ ions doped Cd0.89Zn0.1TM0.01S QDs. The higher transmittance was offered by Ni at. 1% doped Cd:ZnS QDs in the visible region. The PL emission peaks exhibited a high intense green emission. The cyclic voltammetry analysis evidenced that all doped ZnS QDs possessed better electrical properties. Since prepared QDs show better optical properties and these QDs are suitable for optoelectronic device applications.