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Thin films of Lead sulfide deposited through Chemical Bath Deposition, Electrodeposition, Solvothermal, etc., have found their significant role for optoelectronic applications. The present work represents the deposition of optically active Lead Sulfide thin films using Lead Acetate and Thiourea with TEA as a chelating agent at room temperature for the first time. The XRD analysis revealed the deposition of high crystalline PbS thin layers with a cubic crystal structure. The XRD peaks show that the optimum bath time for the kind of process discussed in the present work is 90 min, where the growth rate peaked. Further, the decrease in thickness of the samples might be due to dissolution, loss of adhesion, or saturation effects. From the observed morphological pattern, it is found that when the chelating agents (NaOH & TEA) are added during bath time, film quality gets smoothened and the optimal deposition time is found to be around 60 min, which is in quite similar agreement with the thickness measurement process. The average roughness values of the films was analyzed from the AFM is found to be optimum, and confirms the smoothness of the sample. The FESEM micrograph characterize the tiny spherically shaped grains of peculiar sizes. Additionally, large isolated clusters of elliptically shaped grains observed on the scanning electron micrographs indicate the variable rate of growth of the grains. The elemental composition of the prepared PbS thin films is verified with EDAX analysis. The PbS thin-film optical absorbance pattern demonstrates their high infrared transmittance, refines their suitability for IR sensor applications. The estiamation of band gap values reveals the semiconductor nature of the sample with the energy gap values are in the range of 2.7 eV. The characteristic stable absorption of the prepared Lead Sulfide thin films in the infrared spectral region enhances their potential for various industrial applications and promptly establishes them as a promising candidate for optoelectronic and infrared detection technologies.

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Development of Lead Sulfide Thin Films by Cost-Effective Chemical Bath Deposition Technique for Optoelectronic Application

  • 会议论文

  • 发表日期：

    2026年

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  • Muthusamy Kavinilavu,
  • Ramalingam Venkateswaran,
  • Dhamodaran Mahesh Kumar,
  • Krishnaswamy Saravana Kumar,
  • Gangatharan Sathish Kumar,
  • Venugopalan Anbarasu

摘要

Thin films of Lead sulfide deposited through Chemical Bath Deposition, Electrodeposition, Solvothermal, etc., have found their significant role for optoelectronic applications. The present work represents the deposition of optically active Lead Sulfide thin films using Lead Acetate and Thiourea with TEA as a chelating agent at room temperature for the first time. The XRD analysis revealed the deposition of high crystalline PbS thin layers with a cubic crystal structure. The XRD peaks show that the optimum bath time for the kind of process discussed in the present work is 90 min, where the growth rate peaked. Further, the decrease in thickness of the samples might be due to dissolution, loss of adhesion, or saturation effects. From the observed morphological pattern, it is found that when the chelating agents (NaOH & TEA) are added during bath time, film quality gets smoothened and the optimal deposition time is found to be around 60 min, which is in quite similar agreement with the thickness measurement process. The average roughness values of the films was analyzed from the AFM is found to be optimum, and confirms the smoothness of the sample. The FESEM micrograph characterize the tiny spherically shaped grains of peculiar sizes. Additionally, large isolated clusters of elliptically shaped grains observed on the scanning electron micrographs indicate the variable rate of growth of the grains. The elemental composition of the prepared PbS thin films is verified with EDAX analysis. The PbS thin-film optical absorbance pattern demonstrates their high infrared transmittance, refines their suitability for IR sensor applications. The estiamation of band gap values reveals the semiconductor nature of the sample with the energy gap values are in the range of 2.7 eV. The characteristic stable absorption of the prepared Lead Sulfide thin films in the infrared spectral region enhances their potential for various industrial applications and promptly establishes them as a promising candidate for optoelectronic and infrared detection technologies.