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This chapter explores metal–oxide–semiconductor field-effect transistors (MOSFETs), focusing on DC analysis of MOSFET-based circuits across three key operating regions: saturation, resistive (triode), and cut-off. Special emphasis is placed on circuits operating in the saturation region that is crucial for amplifier applications. A SPICE simulation is provided to support the analysis.

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DC Analysis of MOS Transistors

  • 章节

  • 发表日期：

    2025年

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  • Erkan Yuce,
  • Shahram Minaei

摘要

This chapter explores metal–oxide–semiconductor field-effect transistors (MOSFETs), focusing on DC analysis of MOSFET-based circuits across three key operating regions: saturation, resistive (triode), and cut-off. Special emphasis is placed on circuits operating in the saturation region that is crucial for amplifier applications. A SPICE simulation is provided to support the analysis.