This study presents a digital approach to evaluating the impact of metrological support on charge carrier capture cross-sections and the objectives of optical excitation. The model incorporates theoretical dependencies for arbitrary defect states in the energy gap and various semiconductor types. A characteristic edge of the digitized graph reflects direct- and indirect-bandgap semiconductors, allowing transitions between a₁ and t₂ states within the Brillouin zone of optoelectronic materials used in mechanical engineering. The work analyzes probabilistic optical transitions from valence and conduction bands—through state density distributions—and the photon energy required for deep electronic transitions. Considered states include interband transitions at the absorption edge and shallow to moderately deep levels, which influence sensor performance in machine control systems. “Emergency” failure parameters for optoelectronic materials were identified for future photonic control use. The study combines computational modeling with expert analysis to assess the effects of photonic and concentration-based excitation and metrological control of spectral absorption. Material efficiency and suitability for photoelectronic systems are also determined. As quality criteria for material selection, the study uses parameters like the photon excitation readiness coefficient and a techno-experimental indicator linking digital models with real-world stimuli.