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Gallium oxide (Ga₂O₃) is a semiconductor with significant potential due to its ultra-wide band gap (4.5–5.3 eV) and photosensitive properties, which make it suitable for extreme environments. Among its five polymorphic phases, β-Ga₂O₃ is the most studied and thermodynamically stable, with a monoclinic crystal structure. It is widely used for applications in electronics and photodetectors. In this study, semi-insulating Ga₂O₃ thin film was grown using an upgraded ion beam-assisted deposition (IBAD) system with ultra-high vacuum (UHV) capabilities. The film was grown on p-type silicon substrates, and its crystallographic phases was identified using X-ray diffraction (XRD). The Rutherford Backscattering (RBS) technique determined the stoichiometry of gallium and oxygen, while the Tauc method was employed to calculate the band gap, found to be 4.35 eV. Electrical measurements on device made from this film showed photoelectric behavior, confirming their potential for photomemristors applications. The photomemristor was used in an RMC (resistor-memristor-capacitor) circuit to study the nonlinear behavior when emulating the neuronal membrane.

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Properties of Monoclinic Gallium Oxide Film and Its Photomemristor Application in Nonlinear RMC Circuit

  • 会议论文

  • 发表日期：

    2026年

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  • Marina Sparvoli,
  • Ronaldo D. Mansano,
  • Fábio O. Jorge,
  • Daniel G. Fidelis,
  • Gilson S. Goveia,
  • Cleber L. Silva,
  • Antônio F. Silva,
  • Jaime A. Freitas,
  • Henrique C. Gulino,
  • Gustavo Pedretti,
  • José F. D. Chubaci

摘要

Gallium oxide (Ga₂O₃) is a semiconductor with significant potential due to its ultra-wide band gap (4.5–5.3 eV) and photosensitive properties, which make it suitable for extreme environments. Among its five polymorphic phases, β-Ga₂O₃ is the most studied and thermodynamically stable, with a monoclinic crystal structure. It is widely used for applications in electronics and photodetectors. In this study, semi-insulating Ga₂O₃ thin film was grown using an upgraded ion beam-assisted deposition (IBAD) system with ultra-high vacuum (UHV) capabilities. The film was grown on p-type silicon substrates, and its crystallographic phases was identified using X-ray diffraction (XRD). The Rutherford Backscattering (RBS) technique determined the stoichiometry of gallium and oxygen, while the Tauc method was employed to calculate the band gap, found to be 4.35 eV. Electrical measurements on device made from this film showed photoelectric behavior, confirming their potential for photomemristors applications. The photomemristor was used in an RMC (resistor-memristor-capacitor) circuit to study the nonlinear behavior when emulating the neuronal membrane.