This study utilizes molecular dynamics simulations to investigate the interaction between silicon carbide surfaces and argon atoms, focusing on the effects of gas temperature and normal velocity on the energy accommodation coefficient (EAC). The results demonstrate a decrease-increase variation of EAC as gas temperature increases from 600 to 12,000 K, driven by the interplay of different collision types and their respective partial EACs. When the normal velocity of argon atom increases from 400 to 3000 m/s, a decreasing trend in EAC is observed in the low incident energy range, which mirrors the effect of changing gas temperature. However, in the high incident energy range, EAC exhibits a fluctuating increase with rising incident energy, showing clear periodic peaks and valleys. This suggests that while both increasing incident energy, the mechanisms governing gas-surface interactions differ. Specifically, the change in normal velocity results in the lower degree of the energy exchange at the interface. Effectively leveraging this characteristic can provide valuable insights for the aerodynamic and aeroheating design of high-altitude vehicles.