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Anisotype р-MnCo2O4/n-CdTe heterojunctions with rectifying properties were fabricated by spray-pyrolysis of a mixture of 0.1 M aqueous solutions of MnCl2·4H2O and СоCl2·6H2O salts onto n-CdTe crystalline substrates. The temperature dependences of the I-V-characteristics (T = 295–346 K) were analyzed and it was found that at forward and reverse (V ≥ − 0.5 V) biases, the current flow through the heterojunction is determined by the processes of injection of the main charge carriers into the high-resistance n-CdTe contact region, which is formed during the manufacture of the structures. Based on the theory of space charge-limited currents, the main electrical parameters of the high-resistance part of the base are determined. The features of the C-V-characteristics in the range f = 1.0–100 kHz are explained based on the equivalent electrical circuit of the structure with a high-resistance layer in the base, taking into account its capacitance. The light I-V-characteristics indicate the possibility of practical use of the fabricated р-MnCo2O4/n-CdTe heterojunctions as visible radiation photodetectors.

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Injection Currents in р-MnCo2O4/n-CdTe Anisotypic Heterojunctions

  • 会议论文

  • 发表日期：

    2025年

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  • I. G. Orletskyi,
  • M. I. Ilashchuk,
  • I. P. Koziarskyi,
  • E. V. Maistruk,
  • D. P. Koziarskyi,
  • S. V. Nichyi

摘要

Anisotype р-MnCo2O4/n-CdTe heterojunctions with rectifying properties were fabricated by spray-pyrolysis of a mixture of 0.1 M aqueous solutions of MnCl2·4H2O and СоCl2·6H2O salts onto n-CdTe crystalline substrates. The temperature dependences of the I-V-characteristics (T = 295–346 K) were analyzed and it was found that at forward and reverse (V ≥ − 0.5 V) biases, the current flow through the heterojunction is determined by the processes of injection of the main charge carriers into the high-resistance n-CdTe contact region, which is formed during the manufacture of the structures. Based on the theory of space charge-limited currents, the main electrical parameters of the high-resistance part of the base are determined. The features of the C-V-characteristics in the range f = 1.0–100 kHz are explained based on the equivalent electrical circuit of the structure with a high-resistance layer in the base, taking into account its capacitance. The light I-V-characteristics indicate the possibility of practical use of the fabricated р-MnCo2O4/n-CdTe heterojunctions as visible radiation photodetectors.