Electric-Modulated Anisotropy of Magnetic Tunneling Junctions
摘要
The magnetoelectric effect of the direct transformation of an electric field into an internal effective magnetic field due to a change in the magnetic anisotropy (VCMA effect) of metal ferromagnetic nanolayers in the region of their interface in layered nanostructures forms the basis of the effective control of magnetic states in magnetic memory and information processing systems.