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This chapter examines in detail the physics of heterogeneous junction semiconductor junction semiconductor devices, starting with the Schottky diode, then the metal semiconductor field effect transistor (MESFET) and finally the high electron mobility transistor (HEMT).

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Heterogeneous Junction Field Effect Devices—Schottky Diode, Metal Semiconductor Field Effect Transistor (MESFET), High Electron Mobility Transistor (HEMT)

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  • 发表日期：

    2026年

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  • Amal Banerjee

摘要

This chapter examines in detail the physics of heterogeneous junction semiconductor junction semiconductor devices, starting with the Schottky diode, then the metal semiconductor field effect transistor (MESFET) and finally the high electron mobility transistor (HEMT).