Basic Heterogeneous Bipolar|Bijunction Transistor (HBT) Properties
摘要
This chapter explains how heterogeneous junction bipolar transistors (transconductance resistor) work. These semiconductor devices are replacing homogeneous junction bipolar transistors, because they can conduct ultra high frequency signals (RF and microwave) and switch on–off high current|voltage (10s of Amperes and 100s of Volts). The focus is on understanding the reason behind their ultra high frequency and power performance characteristics.