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This chapter gives a brief introduction to the physical mechanisms that cause radiation effects. Two main effects on semiconductor devices—Total Ionizing Dose (TID) effects and Single Event Effects (SEEs)—are examined. When reviewing the radiation effects in different technology nodes, it was found that the planar transistors in scaled technologies are more tolerant to TID effects but more vulnerable to SEEs. Therefore, in recent years, radiation hardening has focused more on SEEs in technologies below or equal to 90 nm. The following chapter and design also put more emphasis on SEEs. Last but not least, mitigation techniques are presented at different design levels. Some of the techniques are applied to the radiation-hardened ADC design in the later chapters.

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Radiation Effects in CMOS Technology and Mitigating Techniques

  • 章节

  • 发表日期：

    2026年

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  • Zheyi Li,
  • Laurent Berti,
  • Paul Leroux

摘要

This chapter gives a brief introduction to the physical mechanisms that cause radiation effects. Two main effects on semiconductor devices—Total Ionizing Dose (TID) effects and Single Event Effects (SEEs)—are examined. When reviewing the radiation effects in different technology nodes, it was found that the planar transistors in scaled technologies are more tolerant to TID effects but more vulnerable to SEEs. Therefore, in recent years, radiation hardening has focused more on SEEs in technologies below or equal to 90 nm. The following chapter and design also put more emphasis on SEEs. Last but not least, mitigation techniques are presented at different design levels. Some of the techniques are applied to the radiation-hardened ADC design in the later chapters.