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The bandgap reference voltage is the vital module of the analog circuit power supply system. For on-chip EEG acquisition systems, a power supply design characterized by low-noise, low-power consumption, and a high-power supply rejection (PSR) is crucial. Based on the traditional bandgap circuit, this study realizes low noise and high PSR by adopting the PSR enhancement technology and low-noise design to satisfy the requirements of the EEG acquisition chip. In this design, the startup circuit and the trimming circuit are also implemented to address the degenerate working point problem and the manufacturing process error. The circuit design has been fabricated using a 40 nm 1P7M CMOS process. The simulation results show that the bandgap reference voltage can produce a low-frequency PSR of −99.83 dB, a temperature drift factor of 8.341 ppm/°C across the temperature range of 0 ~ 80 °C and an integrated noise of 10.49 μVrms within the frequency range of 10–100 kHz.

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A Low-Noise Bandgap Reference with High PSR for EEG Acquisition Chip

  • 会议论文

  • 发表日期：

    2025年

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  • Lu Liu,
  • Bin Wang,
  • Yiren Xu,
  • Xiaokun Lin,
  • Shuoshuo Zhu,
  • Peng Cheng

摘要

The bandgap reference voltage is the vital module of the analog circuit power supply system. For on-chip EEG acquisition systems, a power supply design characterized by low-noise, low-power consumption, and a high-power supply rejection (PSR) is crucial. Based on the traditional bandgap circuit, this study realizes low noise and high PSR by adopting the PSR enhancement technology and low-noise design to satisfy the requirements of the EEG acquisition chip. In this design, the startup circuit and the trimming circuit are also implemented to address the degenerate working point problem and the manufacturing process error. The circuit design has been fabricated using a 40 nm 1P7M CMOS process. The simulation results show that the bandgap reference voltage can produce a low-frequency PSR of −99.83 dB, a temperature drift factor of 8.341 ppm/°C across the temperature range of 0 ~ 80 °C and an integrated noise of 10.49 μVrms within the frequency range of 10–100 kHz.