Process and plasma damage can cause a spectrum of electrical and structural effects. This chapter covers the common time-zero electrical signatures of damage. Process and plasma damage results in similar electrical signatures as electrical stress and radiation damage. Gate damage including breakdown, interface state generation, and trapping is reviewed. Transistor leakage mechanisms such as subthreshold conduction, gate-induced diode leakage (GIDL), punch-through, and source-drain overlap damage are discussed. Transistor degradation mechanisms, including transistor mismatch, noise increase, and ring oscillator speed degradation associated with damage, are examined. CMOS parametric degradation, including diode leakage, increases in contact resistance, capacitance changes, and isolation edge leakage, is covered. The damage dependence on the dielectric thickness and high-k dielectrics is described. Damage-dependent degradation of radiation hardness and electrostatic discharge structures is discussed.