Plasma damage can be a complex problem to solve, requiring time-consuming troubleshooting, problem-solving, and improvement. The ability to test wafers quickly inline on product or short loop wafers can dramatically shorten the time to a solution for plasma and process damage problems. Methods of inline measurements on test wafers or short loop wafers are discussed. Methods of performing inline measurements on a simple oxide wafer using surface potential measurements are discussed. The use of corona discharge measurements is described.