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Researchers examined the reflectionReflection of plasma, elasticElastic, and thermalThermal waves from a rotating magnetized elasticElastic semiconductorSemiconductor medium. The governing equations were obtained using the photothermal transient process; the model of a reflectionReflection during the mass diffusionDiffusion in a rotating medium is investigated. The harmonic wave approach was used to analyze the basic equations to find the reflectionReflection coefficientsCoefficient of the coupled incident wave (CI) (coupled wave) and incident rotational wave. ThermalThermal and mechanicalMechanical stresses are imposed on the free surfaceSurface of an elasticElastic semiconductorSemiconductor material to analyze the physicalPhysical fields under investigation. The numerical computation of reflectionReflection coefficientsCoefficient is performed to determine how the ratios of reflected wave amplitude to incident wave amplitude vary with the angle of incidence. The numerical results are presented graphically to illustrate the impact of various parameters on the diffusionDiffusion processes, including the magnetic fieldMagnetic field, rotationRotation, and others.

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Thermomechanical Response on a Reflection Photothermal Diffusion Waves of a Rotating Magneto-Semiconductor Medium

  • 章节

  • 发表日期：

    2025年

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  • Kh. Lotfy,
  • A. El-Bary

摘要

Researchers examined the reflectionReflection of plasma, elasticElastic, and thermalThermal waves from a rotating magnetized elasticElastic semiconductorSemiconductor medium. The governing equations were obtained using the photothermal transient process; the model of a reflectionReflection during the mass diffusionDiffusion in a rotating medium is investigated. The harmonic wave approach was used to analyze the basic equations to find the reflectionReflection coefficientsCoefficient of the coupled incident wave (CI) (coupled wave) and incident rotational wave. ThermalThermal and mechanicalMechanical stresses are imposed on the free surfaceSurface of an elasticElastic semiconductorSemiconductor material to analyze the physicalPhysical fields under investigation. The numerical computation of reflectionReflection coefficientsCoefficient is performed to determine how the ratios of reflected wave amplitude to incident wave amplitude vary with the angle of incidence. The numerical results are presented graphically to illustrate the impact of various parameters on the diffusionDiffusion processes, including the magnetic fieldMagnetic field, rotationRotation, and others.