Scholarlink

Spin-based devices are energy efficient because they reduce energy leakage. Recent research has focused on Magnetic Tunnel Junctions (MTJ) as a way to overcome CMOS downscaling constraints. Using MTJ and voltage-controlled magnetic anisotropy (VCMA) for reliable non-volatile (NV) writing control has been suggested. In comparison with traditional spin-transfer torque (STT)--based magnetization switching, VCMA can switch magnetization faster and with lower energy consumption. This paper aims to evaluate the switching time of VCMA-based MTJs using realistic parameters for the material and device. VCMA-assisted STT switching mechanism and STT switching are discussed in this paper. It has been shown that for VCMA-assisted STT schemes to become viable, either physics or material innovation must significantly improve their switching probability. The VCMA coefficient affects the switching time. The switching characteristics with different VCMA coefficients are discussed in this paper. As VCMA co-efficient increases, magnetization switching decreases.

错误：搜索内容不能为空，请输入英文关键词
错误：关键词超出字数限制，请精简
高级检索

High-Speed Non-volatile Spintronics Memory with Low Power

  • 会议论文

  • 发表日期：

    2025年

查看全文
  • Seema Kumari,
  • Rekha Yadav

摘要

Spin-based devices are energy efficient because they reduce energy leakage. Recent research has focused on Magnetic Tunnel Junctions (MTJ) as a way to overcome CMOS downscaling constraints. Using MTJ and voltage-controlled magnetic anisotropy (VCMA) for reliable non-volatile (NV) writing control has been suggested. In comparison with traditional spin-transfer torque (STT)--based magnetization switching, VCMA can switch magnetization faster and with lower energy consumption. This paper aims to evaluate the switching time of VCMA-based MTJs using realistic parameters for the material and device. VCMA-assisted STT switching mechanism and STT switching are discussed in this paper. It has been shown that for VCMA-assisted STT schemes to become viable, either physics or material innovation must significantly improve their switching probability. The VCMA coefficient affects the switching time. The switching characteristics with different VCMA coefficients are discussed in this paper. As VCMA co-efficient increases, magnetization switching decreases.