These days, the majority of embedded systems contain microprocessors with volatile cache memory based on SRAM technology. The performance of SRAM is essential and demands greater attention since it is a fundamental element of computing. While logic and arithmetic processes utilize less than 25% of the worldwide integrated circuits, cache memory occupy approximately 75%, highlighting the need for more performant systems-on-chips (SoCs). Moreover, AI-based implantable electronic components and robotics applications require efficient and reliable SRAM circuits with faster compute-in-memory reaction times. To meet these demands, the three-dimensional gate structure of nanoscale transistors, specifically FinFET, has been introduced for SRAM construction. FinFET has enhanced key performance metrics, including efficiency, power consumption, and space utilization. Additionally, because FinFET is resistant to short-channel effects (SCEs), it has emerged as the preferred transistor for these applications. The performance characteristics of cutting-edge FinFET SRAM cell designs for computing and robotics applications are compared across multiple technologies in this review study.