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By utilizing stimulated Raman scatteringStimulated Raman scattering, it is possible to generate continuous-wave laser light in silicon, an indirect bandgap semiconductorIndirect bandgap semiconductor. The first part of this chapter explains the mechanism of the Raman laserRaman laser using a silicon resonator with a high-quality factor (Q). In the second part, the mechanism of the ultra-low threshold Raman silicon laser using a photonic crystal high-Q nanocavityHigh-Q nanocavity is summarized, and recent advancements are explained.

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Low-Threshold Raman Silicon Lasers Using Photonic Crystal High-Q Nanocavities

  • 章节

  • 发表日期：

    2025年

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  • Yasushi Takahashi,
  • Takashi Asano,
  • Susumu Noda

摘要

By utilizing stimulated Raman scatteringStimulated Raman scattering, it is possible to generate continuous-wave laser light in silicon, an indirect bandgap semiconductorIndirect bandgap semiconductor. The first part of this chapter explains the mechanism of the Raman laserRaman laser using a silicon resonator with a high-quality factor (Q). In the second part, the mechanism of the ultra-low threshold Raman silicon laser using a photonic crystal high-Q nanocavityHigh-Q nanocavity is summarized, and recent advancements are explained.