Scholarlink

The efficacy of the BaSIC topology for enhancing the short-circuit capability of silicon carbide power MOSFETs is described. The short-circuit withstand time for the SiC power MOSFETs can be improved by using a gate source shorted (GSS) silicon depletion mode MOSFET (DMM) as the non-linear current limiting element. Trade-off curves between the short-circuit withstand time and the increase in on-resistance and switching energy loss achieved with the BaSIC(DMM) topology were obtained using 1.2 kV SiC power MOSFETs.

错误：搜索内容不能为空，请输入英文关键词
错误：关键词超出字数限制，请精简
高级检索

BaSIC(DMM) for SiC Power MOSFETs

  • 章节

  • 发表日期：

    2025年

查看全文
  • B. Jayant Baliga,
  • Ajit Kanale

摘要

The efficacy of the BaSIC topology for enhancing the short-circuit capability of silicon carbide power MOSFETs is described. The short-circuit withstand time for the SiC power MOSFETs can be improved by using a gate source shorted (GSS) silicon depletion mode MOSFET (DMM) as the non-linear current limiting element. Trade-off curves between the short-circuit withstand time and the increase in on-resistance and switching energy loss achieved with the BaSIC(DMM) topology were obtained using 1.2 kV SiC power MOSFETs.