The BaSIC topology is a new approach for controlling the switching of power transistors. The BaSIC topology is based on using a non-linear resistance in series with the source of the silicon carbide MOSFETs to enhance the short-circuit withstand time. Commercially available depletion mode and enhancement mode silicon MOSFETs are the most convenient devices to form the non-linear element. In general, the BaSIC topology can be used to increase the short-circuit withstand time for any power device. The BaSIC topology has an inherent current sensing capability. This feature can be utilized to monitor the current flowing through various devices in a power electronic converter. This feature is useful for examination of current distribution among paralleled devices when increasing the power handling capability. An important benefit of utilizing the BaSIC topology is preventing failure of devices under repetitive short-circuit events. It is the only approach that has been shown to achieve this outcome. The BaSIC topology allows detection of the short-circuit event by monitoring the voltage across the non-linear element. This voltage can be fed to the commercially available DESAT protection circuits for silicon IGBTs without the need for a high voltage isolation diode. A shorter response time can be achieved with this approach leading to less stress on the power devices during the short-circuit event.