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This book is focused on power devices used for applications with blocking voltage ratings ranging from 600 to 1700 V. These applications have been served by silicon IGBTs during the last 40 years. During the past decade, silicon carbide power MOSFETs and gallium nitride HEMT devices have been commercialized to supplement the silicon IGBTs. The basic structure of these devices is described in this chapter for the convenience of readers. The characteristics of the devices for short-circuit analysis are analyzed.

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Power Devices

  • 章节

  • 发表日期：

    2025年

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  • B. Jayant Baliga,
  • Ajit Kanale

摘要

This book is focused on power devices used for applications with blocking voltage ratings ranging from 600 to 1700 V. These applications have been served by silicon IGBTs during the last 40 years. During the past decade, silicon carbide power MOSFETs and gallium nitride HEMT devices have been commercialized to supplement the silicon IGBTs. The basic structure of these devices is described in this chapter for the convenience of readers. The characteristics of the devices for short-circuit analysis are analyzed.