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Inadequate short-circuit withstand capability is a major issue that could impede the commercialization of SiC power MOSFETs and GaN HEMT devices for automotive and industrial motor drive applications. This chapter describes the basic short-circuit operating conditions. Analytical solutions for the short-circuit failure time are derived based on adiabatic heating conditions for the semiconductor chips. The analysis allows relating the short-circuit withstand time to the basic transistor device properties.

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Short-Circuit Conditions

  • 章节

  • 发表日期：

    2025年

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  • B. Jayant Baliga,
  • Ajit Kanale

摘要

Inadequate short-circuit withstand capability is a major issue that could impede the commercialization of SiC power MOSFETs and GaN HEMT devices for automotive and industrial motor drive applications. This chapter describes the basic short-circuit operating conditions. Analytical solutions for the short-circuit failure time are derived based on adiabatic heating conditions for the semiconductor chips. The analysis allows relating the short-circuit withstand time to the basic transistor device properties.