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The first application of the BaSIC topology to enhancing the performance of silicon IGBTs by using the Si GSS-DMM device was discussed in Chap. 18 . The power semiconductor industry manufactures a large variety of Si enhancement mode MOSFETs (EMMs) due to their widespread applications. The benefits of utilizing one of these EMM devices for the BaSIC topology for enhancing the short-circuit performance of Si IGBTs are discussed in this chapter. The trade-off between extending the short-circuit withstand time and the increase in on-resistance and switching losses is quantified here. The BaSIC(EMM) implementation allows power electronics designers to achieve the desired short-circuit withstand time with Type 2 IGBTs that are optimized with low on-state voltage drop. They can use the same combination of the Type 2 IGBT and Si EMM device for a variety of applications that need different short-circuit withstand capabilities.

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BaSIC(EMM) for Silicon IGBT

  • 章节

  • 发表日期：

    2025年

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  • B. Jayant Baliga,
  • Ajit Kanale

摘要

The first application of the BaSIC topology to enhancing the performance of silicon IGBTs by using the Si GSS-DMM device was discussed in Chap. 18 . The power semiconductor industry manufactures a large variety of Si enhancement mode MOSFETs (EMMs) due to their widespread applications. The benefits of utilizing one of these EMM devices for the BaSIC topology for enhancing the short-circuit performance of Si IGBTs are discussed in this chapter. The trade-off between extending the short-circuit withstand time and the increase in on-resistance and switching losses is quantified here. The BaSIC(EMM) implementation allows power electronics designers to achieve the desired short-circuit withstand time with Type 2 IGBTs that are optimized with low on-state voltage drop. They can use the same combination of the Type 2 IGBT and Si EMM device for a variety of applications that need different short-circuit withstand capabilities.