The DESAT protection circuit approach has become the most popular method for identification of the short-circuit event for motor drives using Si IGBTs in the inverter. This method requires sensing the voltage drop of the power device at a node undergoing high voltage fluctuations. A high voltage isolation diode with the same voltage rating as the power device is required. The blanking time for the DESAT approach extends the response time to over 3 μs. The short-circuit detection is performed for the BaSIC topology using the voltage at the sense node. The voltage at the sense node in the BaSIC topology always remains below 10 V eliminating the need for the high voltage diode DHV in the typical DESAT implementation. The response time for the BaSIC topology is shorter due to absence of a blanking time required for the typical DESAT method. Experimental demonstration of overcurrent protection with the BaSIC topology is discussed in this chapter.