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The protection of SiC power MOSFETs during a short-circuit event requires turning off the gate drive voltage before the device heats up sufficiently to fail. The short-circuit withstand time for a typical 1.2 kV SiC power MOSFET has been found to be about 3.5–4.0 μs. This time interval is too short for employment of widely available IGBT gate drives designed to turn-off devices within 10 μs. It has been proposed that the response time of gate drive circuits can be enhanced to solve this problem. This may be feasible for single short-circuit events. However, it is demonstrated in this chapter that the SiC power MOSFET can still fail after repetitive short-circuit events and that this problem can be solved by using the BaSIC topology. It is only approach that can address this failure mode for SiC power MOSFET at this time.

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Repetitive Short-Circuit Protection

  • 章节

  • 发表日期：

    2025年

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  • B. Jayant Baliga,
  • Ajit Kanale

摘要

The protection of SiC power MOSFETs during a short-circuit event requires turning off the gate drive voltage before the device heats up sufficiently to fail. The short-circuit withstand time for a typical 1.2 kV SiC power MOSFET has been found to be about 3.5–4.0 μs. This time interval is too short for employment of widely available IGBT gate drives designed to turn-off devices within 10 μs. It has been proposed that the response time of gate drive circuits can be enhanced to solve this problem. This may be feasible for single short-circuit events. However, it is demonstrated in this chapter that the SiC power MOSFET can still fail after repetitive short-circuit events and that this problem can be solved by using the BaSIC topology. It is only approach that can address this failure mode for SiC power MOSFET at this time.