In the previous chapters, it has been demonstrated that the BaSIC topology enables achieving excellent short-circuit withstand time for commercially available SiC power MOSFETs with minimal increase in on-resistance and switching losses. Power MOSFETs in industrial and automotive applications can undergo avalanche breakdown under unclamped inductive load switching (UIS) conditions. Any reduction in the UIS capability could adversely impact the acceptance of the BaSIC topology in industrial and automotive applications. The UIS performance of the BaSIC(DMM) topology is analyzed in this chapter and shown not to degrade the performance of a typical SiC power MOSFET product.