Scholarlink

Excellent performance of the BaSIC topology has been demonstrated in previous chapters by employing silicon depletion mode MOSFETs (DMMs) and silicon enhancement mode MOSFETs (EMMs) as the non-linear resistances placed in series with the SiC power MOSFET. These two approaches are contrasted in this chapter. Trade-off curves between the improvement in short-circuit time and the increase in the on-resistance or the switching losses are developed for the same SiC power MOSFET with the two approaches.

错误：搜索内容不能为空，请输入英文关键词
错误：关键词超出字数限制，请精简
高级检索

BaSIC(DMM) vs BaSIC(EMM) for Silicon Carbide Power MOSFETs

  • 章节

  • 发表日期：

    2025年

查看全文
  • B. Jayant Baliga,
  • Ajit Kanale

摘要

Excellent performance of the BaSIC topology has been demonstrated in previous chapters by employing silicon depletion mode MOSFETs (DMMs) and silicon enhancement mode MOSFETs (EMMs) as the non-linear resistances placed in series with the SiC power MOSFET. These two approaches are contrasted in this chapter. Trade-off curves between the improvement in short-circuit time and the increase in the on-resistance or the switching losses are developed for the same SiC power MOSFET with the two approaches.