The BaSIC(EMM) approach was discussed in Chap. 10 for a 1.2 kV SiC power MOSFET. These results were compared with short-circuit ruggedness improvement achieved by reducing the gate drive voltage in Chap. 11 . In this chapter, both of these approaches are compared with short-circuit ruggedness improvement achieved by using a series ballast resistance connected to the source terminal of the SiC power MOSFET. Trade-off curves between the short-circuit withstand time and the increase in on-resistance and switching energy loss achieved with the BaSIC(EMM) topology are contrasted with the series ballast resistance approach as well as the gate drive voltage reduction approach.