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The down-scaling of device dimensions in MOS technology will improve performance and packing density for VLSI circuits, but it will negatively affect the quality of the circuits because of reliability problems arising from several physical degradation effects. Although digital signal processing is becoming increasingly more powerful and many types of signal processing have indeed moved to digital domain due to the advances in IC technology, analog circuits are fundamentally necessary in many complex and high performance systems. This is caused by the reality that naturally occurring signals are analog. In other words, analog circuits act as a bridge between the real world and digital systems. In analog signal processing, many circuit topologies including active filters, oscillators, immittance simulators, etc. have been proposed in the literature. Today, modern CMOS technologies are continuously scaling down; but as a result of this, analog designers have serious reliability problems in their designs caused by physical effects such as hot-carrier injection, negative and positive bias temperature instability (N/PBTI), and time-dependent dielectric breakdown (TDDB). Therefore, it is an important factor estimating the deviations caused by these degradation mechanisms to obtain a robust design. In this respect, the structure of this book is as follows: The Introduction Section, Chap. 1 , describing the basic concept is followed by Chap. 2 reflecting the definition of reliability analysis and statistical methods. The reliability model for PMOS and NMOS transistors based on statistical methods is given in this section. Demonstration on interesting application examples are given in Chap. 3 which reflects the behavior of a current source-loaded single stage amplifier, CMOS inverter, and CMOS OTA. The following part, Chap. 4 , describes in detail the behavior of a CMOS OTA operating in subthreshold region which is also demonstrated with measurement results. Two different methods are given in this chapter. In addition, a CMOS degradation macromodel is also introduced in this section. Finally, Chap. 5 describes the reliability of power MOSFET circuits demonstrated by giving example circuits.

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Introduction

  • 章节

  • 发表日期：

    2025年

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  • Hakan Kuntman,
  • Deniz Özenli,
  • Fırat Kaçar,
  • Yasin Özçelep

摘要

The down-scaling of device dimensions in MOS technology will improve performance and packing density for VLSI circuits, but it will negatively affect the quality of the circuits because of reliability problems arising from several physical degradation effects. Although digital signal processing is becoming increasingly more powerful and many types of signal processing have indeed moved to digital domain due to the advances in IC technology, analog circuits are fundamentally necessary in many complex and high performance systems. This is caused by the reality that naturally occurring signals are analog. In other words, analog circuits act as a bridge between the real world and digital systems. In analog signal processing, many circuit topologies including active filters, oscillators, immittance simulators, etc. have been proposed in the literature. Today, modern CMOS technologies are continuously scaling down; but as a result of this, analog designers have serious reliability problems in their designs caused by physical effects such as hot-carrier injection, negative and positive bias temperature instability (N/PBTI), and time-dependent dielectric breakdown (TDDB). Therefore, it is an important factor estimating the deviations caused by these degradation mechanisms to obtain a robust design. In this respect, the structure of this book is as follows: The Introduction Section, Chap. 1 , describing the basic concept is followed by Chap. 2 reflecting the definition of reliability analysis and statistical methods. The reliability model for PMOS and NMOS transistors based on statistical methods is given in this section. Demonstration on interesting application examples are given in Chap. 3 which reflects the behavior of a current source-loaded single stage amplifier, CMOS inverter, and CMOS OTA. The following part, Chap. 4 , describes in detail the behavior of a CMOS OTA operating in subthreshold region which is also demonstrated with measurement results. Two different methods are given in this chapter. In addition, a CMOS degradation macromodel is also introduced in this section. Finally, Chap. 5 describes the reliability of power MOSFET circuits demonstrated by giving example circuits.