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This chapter describes a method to achieve negative feedback around a common-source amplifier by utilizing the back-gate transconductance. This topology, unique to Fully Depleted Silicon-on-Insulator (FD-SOI) technology, provides the benefits of feedback including linearization and low-gain mismatch without increasing noise or power and without any explicit feedback network components. Analog performance metrics for this amplifier are derived, and a prototype inverter-based amplifier is implemented in 22-nm FD-SOI and measured. Across inversion level, the amplifier with back-gate feedback has 5–10 \(\times \) lower-gain mismatch and 6–20 dB higher VIP \(_3\) than a conventional amplifier with a diode-connected load.

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Common-Source Amplifier Feedback Using Back-Gate Transconductance

  • 章节

  • 发表日期：

    2025年

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  • Stephen Weinreich,
  • Boris Murmann

摘要

This chapter describes a method to achieve negative feedback around a common-source amplifier by utilizing the back-gate transconductance. This topology, unique to Fully Depleted Silicon-on-Insulator (FD-SOI) technology, provides the benefits of feedback including linearization and low-gain mismatch without increasing noise or power and without any explicit feedback network components. Analog performance metrics for this amplifier are derived, and a prototype inverter-based amplifier is implemented in 22-nm FD-SOI and measured. Across inversion level, the amplifier with back-gate feedback has 5–10 \(\times \) lower-gain mismatch and 6–20 dB higher VIP \(_3\) than a conventional amplifier with a diode-connected load.