This chapter discusses advanced process technologies for designing System-on-Chips (SOCs) at 10nm and below, emphasizing design methodologies and manufacturing challenges. It explores SOC design through IP core integration, covering selection, verification, and optimization strategies for power, performance, and area efficiency. The chapter details FinFET process technology, highlighting advantages over planar MOSFETs, modeling complexities, and manufacturability considerations like restricted design rules (RDR) and stress effects. Lithography challenges, including multiple patterning, cut-metal techniques, and optical proximity correction, are addressed to ensure pattern fidelity in deep submicron nodes. Additionally, the chapter covers emerging trends like AI-driven EDA tools, 3D chip architectures, and advanced metrology techniques for optimizing yield and performance in next-generation semiconductor manufacturing.