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A brief review is given of the elastic constraint theorySelf-organization applicable to chalcogenide glassesChalcogenide glasses (ChG) and its experimental proving on the intermediate phase (IP) of As-S-Ge ternaryTernary. The last has been performed via Raman scattering experiments and analysis of the same at composition change along the IP tie-line (GeS4)x(AsS3)1–x. Such an approach allowed the revealing of the vibrational modes of the main structural blocks of the glass network and their scattering strength. It was pointed out that the scattering strength of the Raman modes strongly varies with composition change, at that the mode 336 cm−1 associated to symmetric stretch in flexibleFlexible QT S = As(S1/2)3 in charge of structural self-organizationSelf-organization (SO) of the glass, reaches its maximal value in composition (Ge7.7As15.3S77) but suddenly decreases in neighbor compositions. These results correlate with the compositional dependence of molar volume and elastic modulus of the glass because they reach the respective extrema, namely around that composition. The solid electrolytes with a mixed electronic and ionic conductivity based on glasses from the IP region of the As-S-Ge ternaryTernary have been fabricated via photo-dissolution of Ag in ChG that further were used as active parts of the programmable memory cellsMemory cells. It turned out that the SO of the glass structure leads to a significant increase in the electrical conductance of solid electrolytes based on them, which significantly reduces the erasing time of information stored in the memory cellsMemory cells. The given results reveal the positive effect of structural SO of the GhG on their properties for different applications.

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Intermediate Phase Glasses of the As-S-Ge Ternary: Self-Organization, Properties and Applications in Programmable Metallization Cells

  • 会议论文

  • 发表日期：

    2025年

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  • Dumitru Tsiulyanu,
  • Marina Ciobanu,
  • Andrei Afanasiev

摘要

A brief review is given of the elastic constraint theorySelf-organization applicable to chalcogenide glassesChalcogenide glasses (ChG) and its experimental proving on the intermediate phase (IP) of As-S-Ge ternaryTernary. The last has been performed via Raman scattering experiments and analysis of the same at composition change along the IP tie-line (GeS4)x(AsS3)1–x. Such an approach allowed the revealing of the vibrational modes of the main structural blocks of the glass network and their scattering strength. It was pointed out that the scattering strength of the Raman modes strongly varies with composition change, at that the mode 336 cm−1 associated to symmetric stretch in flexibleFlexible QT S = As(S1/2)3 in charge of structural self-organizationSelf-organization (SO) of the glass, reaches its maximal value in composition (Ge7.7As15.3S77) but suddenly decreases in neighbor compositions. These results correlate with the compositional dependence of molar volume and elastic modulus of the glass because they reach the respective extrema, namely around that composition. The solid electrolytes with a mixed electronic and ionic conductivity based on glasses from the IP region of the As-S-Ge ternaryTernary have been fabricated via photo-dissolution of Ag in ChG that further were used as active parts of the programmable memory cellsMemory cells. It turned out that the SO of the glass structure leads to a significant increase in the electrical conductance of solid electrolytes based on them, which significantly reduces the erasing time of information stored in the memory cellsMemory cells. The given results reveal the positive effect of structural SO of the GhG on their properties for different applications.