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In this research, the thermoelectric properties of aluminium-doped zinc oxide (AZO) thin films were investigated and utilized for the development of Thermoelectric Energy Harvester (TEH). The escalating energy demand and environmental impacts of fossil fuel-based energy sources necessitate innovative, sustainable solutions. This study explores the thermoelectric properties of Aluminum-doped Zinc Oxide (AZO) thin films for efficient waste heat harvesting. AZO nanoparticles offer a promising alternative to traditional energy sources, enabling direct conversion of waste heat into electricity in Thermoelectric Generators (TEGs). This experiment investigates the thermoelectric characteristics of AZO thin films, aiming to harness waste heat and contribute to the development of environmentally friendly energy technologies. The films were fabricated by spin coating technique onto corning glass substrates, and the effect of varying aluminium doping concentrations on the thermoelectric properties of ZnO were analysed. UV–Visible spectroscopy characterised the thin films, revealing band gap energies of 3.10 eV, 3.041 eV, and 3.034 eV for 3%, 5%, and 7% aluminium doping, respectively. The electrical conductivities were found to be 1.625 × 10−5, 4.25 × 10−4, 2.22 × 10−5 S/cm for 5%, 7% and 10% Al-doped ZnO respectively. Analysis of the thermoelectric response indicated that the Seebeck coefficient increased with aluminium doping concentrations from 3 to 7%, yielding values of 67.7, 98.86, and 186.17 µV/K, respectively. However, a sudden decrease in the Seebeck coefficient to 131.68 µV/K was observed at 10% Al-doping. The values of power factor and the figure of merit were found to be 1.587 × 10−11, 1.47 × 10−9, 3.85 × 10−11 W/mK and 4.77 × 10−8, 4.41 × 10−6, 1.155 × 10−7 respectively for 5%, 7%, and 10% Al-doped ZnO thin film. These results highlight the influence of aluminium doping on the thermoelectric properties of ZnO thin films, providing valuable insights for optimising their performance in thermoelectric applications.

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Development of Thermoelectric Energy Harvester Using AZO Semiconductor Thin Films

  • 会议论文

  • 发表日期：

    2025年

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  • Dhruv Verma,
  • Siddharth Bora,
  • Priya Burdak,
  • Kangleikhonbi Maibam,
  • Jai shree Choudhary,
  • Mallika Verma,
  • Monika Tomar,
  • Anjali Sharma

摘要

In this research, the thermoelectric properties of aluminium-doped zinc oxide (AZO) thin films were investigated and utilized for the development of Thermoelectric Energy Harvester (TEH). The escalating energy demand and environmental impacts of fossil fuel-based energy sources necessitate innovative, sustainable solutions. This study explores the thermoelectric properties of Aluminum-doped Zinc Oxide (AZO) thin films for efficient waste heat harvesting. AZO nanoparticles offer a promising alternative to traditional energy sources, enabling direct conversion of waste heat into electricity in Thermoelectric Generators (TEGs). This experiment investigates the thermoelectric characteristics of AZO thin films, aiming to harness waste heat and contribute to the development of environmentally friendly energy technologies. The films were fabricated by spin coating technique onto corning glass substrates, and the effect of varying aluminium doping concentrations on the thermoelectric properties of ZnO were analysed. UV–Visible spectroscopy characterised the thin films, revealing band gap energies of 3.10 eV, 3.041 eV, and 3.034 eV for 3%, 5%, and 7% aluminium doping, respectively. The electrical conductivities were found to be 1.625 × 10−5, 4.25 × 10−4, 2.22 × 10−5 S/cm for 5%, 7% and 10% Al-doped ZnO respectively. Analysis of the thermoelectric response indicated that the Seebeck coefficient increased with aluminium doping concentrations from 3 to 7%, yielding values of 67.7, 98.86, and 186.17 µV/K, respectively. However, a sudden decrease in the Seebeck coefficient to 131.68 µV/K was observed at 10% Al-doping. The values of power factor and the figure of merit were found to be 1.587 × 10−11, 1.47 × 10−9, 3.85 × 10−11 W/mK and 4.77 × 10−8, 4.41 × 10−6, 1.155 × 10−7 respectively for 5%, 7%, and 10% Al-doped ZnO thin film. These results highlight the influence of aluminium doping on the thermoelectric properties of ZnO thin films, providing valuable insights for optimising their performance in thermoelectric applications.