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In this work, we report a dual-wavelength UV–visible GaN–Al2O3–Au–rGO photodetector (PD). The optical response of the proposed PD design is analyzed in photovoltaic mode (i.e., zero bias) using the FDTD simulation methodology. We observed the performance (primarily in terms of absorption and responsivity) of this PD structure by varying the Au thickness (say, dAu) ranging from 30 to 80 nm. From the simulation results, a dual-wavelength response (i.e., UV–visible) is observed for different values of dAu. Also, with an increase in dAu, absorbance reaches a maximum magnitude of 0.92 a.u. at λp = 370.58 nm (UV) and 0.87 a.u. at λp = 480.17 nm (visible), with corresponding responsivity (ρ) = 172.29 mA/W and ρ = 204.52 mA/W, respectively. Furthermore, the electrical response of the optimized GaN–Al2O3–Au (60 nm)–rGO design shows an ultralow dark current (Id) of 1.50 × 10−17 A. A significant enhancement in photocurrent is also observed with a light illumination of power (Pin) of 0.1 nW/μm2. Additionally, the proposed device design exhibits high D* (Detectivity), low Pd (Minimum Detectable Power), and NEP (Noise Equivalent Power) of 0.23 × 1011 Jones, 0.0087 × 10−14 W, and 43.47 pW/√Hz for UV response and 0.27 × 1011 Jones, 0.0075 × 10−14 W, and 37.03 pW/√Hz for visible response, respectively at 0 V.

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Dual-Wavelength GaN–Al2O3–Au–rGO Heterostructure-Based UV–Visible Photodetector with High Responsivity and Low Dark Current

  • 会议论文

  • 发表日期：

    2025年

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  • Richa Jangra,
  • Satyendra Kumar Mishra,
  • Anuj K. Sharma

摘要

In this work, we report a dual-wavelength UV–visible GaN–Al2O3–Au–rGO photodetector (PD). The optical response of the proposed PD design is analyzed in photovoltaic mode (i.e., zero bias) using the FDTD simulation methodology. We observed the performance (primarily in terms of absorption and responsivity) of this PD structure by varying the Au thickness (say, dAu) ranging from 30 to 80 nm. From the simulation results, a dual-wavelength response (i.e., UV–visible) is observed for different values of dAu. Also, with an increase in dAu, absorbance reaches a maximum magnitude of 0.92 a.u. at λp = 370.58 nm (UV) and 0.87 a.u. at λp = 480.17 nm (visible), with corresponding responsivity (ρ) = 172.29 mA/W and ρ = 204.52 mA/W, respectively. Furthermore, the electrical response of the optimized GaN–Al2O3–Au (60 nm)–rGO design shows an ultralow dark current (Id) of 1.50 × 10−17 A. A significant enhancement in photocurrent is also observed with a light illumination of power (Pin) of 0.1 nW/μm2. Additionally, the proposed device design exhibits high D* (Detectivity), low Pd (Minimum Detectable Power), and NEP (Noise Equivalent Power) of 0.23 × 1011 Jones, 0.0087 × 10−14 W, and 43.47 pW/√Hz for UV response and 0.27 × 1011 Jones, 0.0075 × 10−14 W, and 37.03 pW/√Hz for visible response, respectively at 0 V.