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Layered ultrathin two-dimensional (2D) Tungsten disulfide (WS2) nanosheets have garnered significant interest as semiconducting channels in field-effect transistor (FET) applications. Despite their potential, WS2-based FETs often fall short of desired performance levels, due to challenges such as uneven nanosheet surfaces, inherent surface defects, and high barrier heights at the metal-semiconductor interface. This study investigates the fabrication and characterization of few-layer WS2 nanosheet-based FETs. The WS2 channel-based FET demonstrates non-linear output characteristics, with a current on/off (Ion/Ioff) ratio of approximately 103 and a field-effect mobility (μFE) of ~ 14.3 cm2/V s. The lower Ion/Ioff ratio reflects higher dielectric leakage and high interface trap density, which degrade the threshold voltage and subthreshold swing of the device. This work advances the understanding of WS2-FET fabrication and electrical properties, offering valuable insights into these devices limitations and practical challenges in real-world applications.

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The Atomically Thin Few-Layer of WS2 Nanosheets in the Field Effect Transistor Application

  • 会议论文

  • 发表日期：

    2025年

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  • Arpita Roy,
  • Biplob Mondal

摘要

Layered ultrathin two-dimensional (2D) Tungsten disulfide (WS2) nanosheets have garnered significant interest as semiconducting channels in field-effect transistor (FET) applications. Despite their potential, WS2-based FETs often fall short of desired performance levels, due to challenges such as uneven nanosheet surfaces, inherent surface defects, and high barrier heights at the metal-semiconductor interface. This study investigates the fabrication and characterization of few-layer WS2 nanosheet-based FETs. The WS2 channel-based FET demonstrates non-linear output characteristics, with a current on/off (Ion/Ioff) ratio of approximately 103 and a field-effect mobility (μFE) of ~ 14.3 cm2/V s. The lower Ion/Ioff ratio reflects higher dielectric leakage and high interface trap density, which degrade the threshold voltage and subthreshold swing of the device. This work advances the understanding of WS2-FET fabrication and electrical properties, offering valuable insights into these devices limitations and practical challenges in real-world applications.