This work presents a common source amplifier in 32 nm technology node. The Common Source amplifier has been designed using MOS, CNT and fractional technologies. Issues related to miniaturization of MOS transistors like increased leakage currents, high power dissipation and short channel effects have been addressed by CNT transistors. CNTFET’s provide greater scalability, higher drive currents, faster operation and optimal power dissipation. Inclusion of a fractional capacitor of fractional order, α = 0.62 and 0.45 in the topology confers additional design freedom. Change in fractional order, α keeping all the other circuit passives same causes a change in output parameters. There is an observed 25% more amplification with α = 0.45 as obtained with α = 0.62 fractional order. The analysis of fractional Common Source configuration shows better dynamic control but 64.7% higher power dissipation as compared to the topology having integer order capacitors. MOS transistors of 32 nm technology node give a cutoff frequency of 97 GHz, CNTFET transistors increase the cut-off frequency to 3.79 THz and inclusion of a fractional capacitor (α = 0.45) provides a cut-off frequency of 71.06 GHz. The CNTFET’s are known to operate in THz frequency regime. All the three designs have been analyzed and the trade-offs of each discussed in the paper.