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Low temperature synthesis of nickel oxide nanoparticles is investigated for application as hole transport layer in solution processed quantum dot light emitting devices. The nickel oxide nanoparticle hole transport layer shows a deep valence band at -6.22eV, thereby reducing the barrier for hole injection at the interface. Consequently, the turn on voltage obtained is about 3 V with peak emission at 9 V. The external quantum and current efficiencies are found to be 2.36% and 4.14 cd/A, respectively.

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Low Temperature, Solution Processed Nickel Oxide Nanoparticles as Hole Transport Layer in Quantum Dot Light Emitting Device

  • 会议论文

  • 发表日期：

    2025年

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  • Jayanta Saha,
  • Sanjay Sriram,
  • Ramesh Vasan

摘要

Low temperature synthesis of nickel oxide nanoparticles is investigated for application as hole transport layer in solution processed quantum dot light emitting devices. The nickel oxide nanoparticle hole transport layer shows a deep valence band at -6.22eV, thereby reducing the barrier for hole injection at the interface. Consequently, the turn on voltage obtained is about 3 V with peak emission at 9 V. The external quantum and current efficiencies are found to be 2.36% and 4.14 cd/A, respectively.