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This study focuses on development of deep UV photodetectors using Ga2O3 thin film deposited on silicon wafer using RF magnetron sputtering at a deposition temperature of 600 °C. Optical and Structural properties of prepared Ga2O3 thin film were studied using UV–visible spectroscopy and X-ray diffraction. The UV photodetection of the prepared Ga2O3 thin film was determined using deep UV source of 254 nm wavelength. The photo-response of \(1.138\) was obtained for the Ga2O3 thin film-based UV photodetection towards 254 nm source.

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Gallium Oxide Thin Film Based Deep UV Photodetector

  • 会议论文

  • 发表日期：

    2025年

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  • Bhishm Pratap Dev,
  • Kajal Jindal,
  • Monika Tomar,
  • Arijit Chowdhuri,
  • Anjali Sharma

摘要

This study focuses on development of deep UV photodetectors using Ga2O3 thin film deposited on silicon wafer using RF magnetron sputtering at a deposition temperature of 600 °C. Optical and Structural properties of prepared Ga2O3 thin film were studied using UV–visible spectroscopy and X-ray diffraction. The UV photodetection of the prepared Ga2O3 thin film was determined using deep UV source of 254 nm wavelength. The photo-response of \(1.138\) was obtained for the Ga2O3 thin film-based UV photodetection towards 254 nm source.