As the physical scaling of CMOS-based integrated circuits approaches its limits, the importance of novel materials and devices has significantly increased in recent years. The XOR logic gate serves as a fundamental element in encrypted circuits and digital adders. In this work, XOR and XNOR gates are designed using only four ambipolar CNTFETs, which utilize the ambipolarity behavior of ambipolar CNTFETs to modulate the threshold voltage, which makes the ambipolar CNTFETs act like either n-type or p-type CNTFETs only, whereas 12 transistors are required for designing the traditional CMOS-based or CNTFETs-based XOR and XNOR logic gates. The results demonstrate that the ambipolar CNTFET-based XOR logic gate surpasses the CMOS-based XOR gate, achieving reductions in transistor count, power consumption, PDP, and delay by 67%, 96%, 97%, and 12%, respectively. Ambipolar CNTFET-based XNOR logic gates demonstrate enhanced performance over CMOS-based XNOR logic gates, achieving reductions of 67%, 94%, 9%, and 95% in transistor count, power consumption, delay, and PDP, respectively. Both ambipolar CNTFET-based XOR and XNOR logic gates show improvement in transistor count by 67% as compared to CNTFET-based XOR and XNOR logic gates. Simulations are carried out with HSPICE software at a technology node of 32 nm.