Wideband photo detectors are critical components in modern communication systems, enabling high-speed data transmission and improved signal fidelity. This paper presents a study on the simulation and optimization aspects of InGaAsP/InP multi-well photo detectors, focusing on their application in communication systems wavelength range ~ 1000 nm to ~ 2000 nm,. We investigate the properties of In(1-x)GaxAsyP(1-y)/InP photo detectors with change in mole fraction of As as it influences device performance, such as well and barrier energy gap, dark current and photo current. Using simulation tools, we model the electronic band structure and carrier transport mechanisms within the photo detectors, employing the k⋅p method and quantum well models. We explore various optimization metrics including responsively, quantum efficiency, bandwidth, and noise analysis.