Scholarlink

Gate-all-around (GAA) nanowire FET architecture has been analyzed with device physics based transport assessment. In this chapter, the author of this book shows the configuration of vertically stacked gate-all-around nanowire nanosheets where the term ‘nanosheet’ arises from FinFET based heigh reduction while the nanowire size (width and length) is controlled when the node is around 5 nm.

错误：搜索内容不能为空，请输入英文关键词
错误：关键词超出字数限制，请精简
高级检索

Gate-All-Around (GAA) Nanosheet Based FET Device Physics Based Performance Analysis

  • 章节

  • 发表日期：

    2025年

查看全文
  • Nabil Shovon Ashraf

摘要

Gate-all-around (GAA) nanowire FET architecture has been analyzed with device physics based transport assessment. In this chapter, the author of this book shows the configuration of vertically stacked gate-all-around nanowire nanosheets where the term ‘nanosheet’ arises from FinFET based heigh reduction while the nanowire size (width and length) is controlled when the node is around 5 nm.