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Preview of the Chap. 1 : Due to non parabolicity effect in n-type and p-type silicon with high degenerate doping at T = 300 K, the DOS effective mass of electron and hole in silicon which is considered to be of fixed values even up to high degenerate doping level in n-type and p-type silicon at T = 300 K, increase sharply non-linearly with the increase factor is higher for DOS effective hole mass in silicon at T = 300 K being subject to more intense band non parabolicity effect than n-type silicon due to p-type silicon’s different band structure than n-type extrinsic silicon at T = 300 K.

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Band Non Parabolicity Introduced DOS Effective Electron Mass and Hole Effective Mass in Silicon at T = 300 K Impact on Related Parameters in Chapter 1

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  • 发表日期：

    2025年

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  • Nabil Shovon Ashraf

摘要

Preview of the Chap. 1 : Due to non parabolicity effect in n-type and p-type silicon with high degenerate doping at T = 300 K, the DOS effective mass of electron and hole in silicon which is considered to be of fixed values even up to high degenerate doping level in n-type and p-type silicon at T = 300 K, increase sharply non-linearly with the increase factor is higher for DOS effective hole mass in silicon at T = 300 K being subject to more intense band non parabolicity effect than n-type silicon due to p-type silicon’s different band structure than n-type extrinsic silicon at T = 300 K.