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Zinc Oxide Nanowire Field Effect Transistors (ZnO NW-FETs) have been one of the most exciting research topics, attracting special attention from scientists worldwide. Many recent studies have demonstrated the device’s excellent electromechanical properties and its potential for manufacturing optoelectronic devices, sensors, and next-generation integrated circuits (ICs). This paper presents a model of a double-gate ZnO NW-FET and provides a method to calculate the device’s current-voltage characteristics. A novel approach in this research involves the utilization of the Schrödinger-Poisson equation and the Non-Equilibrium Green’s Function (NEGF) method, which is a simple and effective way to analyze and calculate the parameters of the nano-scale component. Subsequently, the calculated results are simulated using Matlab software, considering various parameters such as threshold voltage, channel length, nanowire diameter, and gate oxide thickness. Additionally, the simulation results show that the drain current of the double-gate ZnO NW-FET is significantly higher than that of the single-gate ZnO NW-FET.

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Simulation of Current-Voltage Characteristics in Double-Gate Field-Effect Transistor Using ZnO Nanowires

  • 会议论文

  • 发表日期：

    2025年

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  • An-Nguyen Van,
  • Hong Tham-Le Thi

摘要

Zinc Oxide Nanowire Field Effect Transistors (ZnO NW-FETs) have been one of the most exciting research topics, attracting special attention from scientists worldwide. Many recent studies have demonstrated the device’s excellent electromechanical properties and its potential for manufacturing optoelectronic devices, sensors, and next-generation integrated circuits (ICs). This paper presents a model of a double-gate ZnO NW-FET and provides a method to calculate the device’s current-voltage characteristics. A novel approach in this research involves the utilization of the Schrödinger-Poisson equation and the Non-Equilibrium Green’s Function (NEGF) method, which is a simple and effective way to analyze and calculate the parameters of the nano-scale component. Subsequently, the calculated results are simulated using Matlab software, considering various parameters such as threshold voltage, channel length, nanowire diameter, and gate oxide thickness. Additionally, the simulation results show that the drain current of the double-gate ZnO NW-FET is significantly higher than that of the single-gate ZnO NW-FET.