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This chapter provides a brief overview of the metalorganic chemical vapor deposition (MOCVD) of GaN aiming for fast growth rates, high electron mobility, low controllable doping, and smooth surface morphology—all critical features for vertical GaN-on-GaN power device applications. Laser-assisted MOCVD growth of GaN combined with the use of off-axis GaN substrates are demonstrated as effective approaches to achieve high-quality GaN epitaxy with low carbon incorporation at fast growth rates (> 5 μm/h). The key design elements of vertical GaN PN diodes are introduced. A series of vertical GaN-on-GaN PN diodes with avalanche breakdown voltages of 1 kV, 1.6 kV, 5 kV, and 7.8 kV are demonstrated and discussed.

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Laser-Assisted MOCVD GaN and the Development of Vertical GaN-on-GaN PN Diodes

  • 章节

  • 发表日期：

    2025年

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  • Vijay Gopal Thirupakuzi Vangipuram,
  • Yibo Xu,
  • Wu Lu,
  • Hongping Zhao

摘要

This chapter provides a brief overview of the metalorganic chemical vapor deposition (MOCVD) of GaN aiming for fast growth rates, high electron mobility, low controllable doping, and smooth surface morphology—all critical features for vertical GaN-on-GaN power device applications. Laser-assisted MOCVD growth of GaN combined with the use of off-axis GaN substrates are demonstrated as effective approaches to achieve high-quality GaN epitaxy with low carbon incorporation at fast growth rates (> 5 μm/h). The key design elements of vertical GaN PN diodes are introduced. A series of vertical GaN-on-GaN PN diodes with avalanche breakdown voltages of 1 kV, 1.6 kV, 5 kV, and 7.8 kV are demonstrated and discussed.