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This chapter provides a brief overview of GaN substrate development by a near-equilibrium ammonothermal (NEAT) method. Currently, 2″ n-type GaN substrates with a dislocation density of low-105 cm−2 and oxygen concentration of low-1018 cm−3 are produced at SixPoint Materials. Using grazing angle X-ray rocking curves, the removal of subsurface damage after CMP is confirmed. In addition, semi-insulating GaN crystals are grown by doping Mn to the crystals. 4″ GaN bulk crystals with a dislocation density of low-105 cm−2 are also demonstrated for future 4″ substrate development. The NEAT method will provide large-area, low-cost, low-dislocation GaN substrates for future GaN-on-GaN power devices.

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Near-Equilibrium Ammonothermal (NEAT) Growth of Low-Dislocation GaN for Power Devices

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  • 发表日期：

    2025年

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  • Tadao Hashimoto,
  • Edward Letts,
  • Daryl Key

摘要

This chapter provides a brief overview of GaN substrate development by a near-equilibrium ammonothermal (NEAT) method. Currently, 2″ n-type GaN substrates with a dislocation density of low-105 cm−2 and oxygen concentration of low-1018 cm−3 are produced at SixPoint Materials. Using grazing angle X-ray rocking curves, the removal of subsurface damage after CMP is confirmed. In addition, semi-insulating GaN crystals are grown by doping Mn to the crystals. 4″ GaN bulk crystals with a dislocation density of low-105 cm−2 are also demonstrated for future 4″ substrate development. The NEAT method will provide large-area, low-cost, low-dislocation GaN substrates for future GaN-on-GaN power devices.