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This chapter provides an overview of breakdown phenomena under high electric field in GaN. Two different mechanisms, Zener breakdown and avalanche breakdown, are discussed. They are due to band-to-band tunneling and impact ionization, respectively. After explanation of basic theories, recent experimental reports on these phenomena by using high-quality GaN pn junctions grown on GaN (0001) bulk substrates are reviewed. Material parameters to describe these phenomena are shown. They can be used to predict leakage current or breakdown voltage. They are very important to design or optimize device structures.

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Breakdown Phenomena in GaN

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  • 发表日期：

    2025年

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  • Jun Suda

摘要

This chapter provides an overview of breakdown phenomena under high electric field in GaN. Two different mechanisms, Zener breakdown and avalanche breakdown, are discussed. They are due to band-to-band tunneling and impact ionization, respectively. After explanation of basic theories, recent experimental reports on these phenomena by using high-quality GaN pn junctions grown on GaN (0001) bulk substrates are reviewed. Material parameters to describe these phenomena are shown. They can be used to predict leakage current or breakdown voltage. They are very important to design or optimize device structures.