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Vertical bulk GaN-based power semiconductor devices are attractive due to their scalability to high current and high voltage. Furthermore, the demonstrated avalanche capabilities are not seen in lateral GaN power devices. This chapter discusses electronic transport relevant to device performance, in the context of GaN vertical diodes and transistors.

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Electronic Transport and Advances in Vertical Bulk GaN-Based Power Semiconductor Devices

  • 章节

  • 发表日期：

    2025年

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  • Srabanti Chowdhury,
  • Ozgur Aktas,
  • Rongming Chu

摘要

Vertical bulk GaN-based power semiconductor devices are attractive due to their scalability to high current and high voltage. Furthermore, the demonstrated avalanche capabilities are not seen in lateral GaN power devices. This chapter discusses electronic transport relevant to device performance, in the context of GaN vertical diodes and transistors.